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BCX19TC

更新时间: 2024-09-24 21:16:39
品牌 Logo 应用领域
捷特科 - ZETEX 光电二极管晶体管
页数 文件大小 规格书
1页 35K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCX19TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-23, 3 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.07最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified参考标准:CECC50002-236
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzVCEsat-Max:0.62 V
Base Number Matches:1

BCX19TC 数据手册

  
SOT23 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
ISSUE 4 – MARCH 2001  
BCX19  
PARTMARKING DETAILS –  
BCX19 -  
BCX19R -  
U1  
U4  
E
C
COMPLEMENTARY TYPES - BCX17  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCES  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
45  
V
V
5
V
Peak Pulse Current  
1000  
500  
mA  
mA  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Base Current  
IC  
IB  
100  
Peak Base Current  
IBM  
200  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
Tj:Tstg  
330  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Cut-Off  
Current  
ICBO  
100  
200  
nA  
µA  
VCB =20V  
CB =20V, Tj=150°C  
V
Emitter-Base Cut-Off  
Current  
IEBO  
10  
µA  
VEB =5V  
Base-Emitter Voltage  
VBE  
1.2  
V
IC =500mA, VCE =1V*  
IC =500mA, IB =50mA*  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
620  
mV  
Static Forward Current  
Transfer Ratio  
hFE  
100  
70  
40  
600  
IC =100mA, VCE =1V  
I
C =300mA, VCE =1V*  
IC =500mA, VCE =1V*  
Transition Frequency  
Output Capacitance  
fT  
200  
5.0  
MHz IC =10mA, VCE =5V  
f =35MHz  
Cobo  
pF  
VCB =10V, f =1MHz  
*Measured under pulsed conditions.  
TBA  

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