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BCX20 PDF预览

BCX20

更新时间: 2024-01-02 18:58:06
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 123K
描述
Surface mount Si-Epitaxial PlanarTransistors

BCX20 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.62 VBase Number Matches:1

BCX20 数据手册

 浏览型号BCX20的Datasheet PDF文件第2页 
BCX 19, BCX 20  
NPN  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
NPN  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
250 mW  
±0.1  
Plastic case  
SOT-23  
1.1  
2.9  
0.4  
Kunststoffgehäuse  
(TO-236)  
3
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
2
1
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.9  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BCX 19  
45 V  
50 V  
BCX 20  
25 V  
30 V  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
B open  
E open  
C open  
VCE0  
VCB0  
VEB0  
Ptot  
5 V  
250 mW 1)  
500 mA  
1 A  
IC  
Peak Collector current – Kollektor-Spitzenstrom ICM  
Peak Base current – Basis-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
IBM  
Tj  
TS  
200 mA  
150C  
- 65…+ 150C  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Min.  
Typ.  
Max.  
Collector-Base cutoff current – Kollektorreststrom  
IE = 0, VCB = 20 V  
ICB0  
ICB0  
100 nA  
5 A  
IE = 0, VCB = 20 V, Tj = 150C  
Emitter-Base cutoff current – Emitterreststrom  
IC = 0, VEB = 5 V  
IEB0  
100 nA  
620 mV  
Collector saturation volt. – Kollektor-Sättigungsspg. 2)  
IC = 500 mA, IB = 50 mA  
VCEsat  
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
Tested with pulses tp = 300 s, duty cycle 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhältnis 2%  
54  
01.11.2003  

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