Datasheet > BCX19-MR

BCX19-MR

更新时间： 2024-09-22 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管过程控制系统 PCS
页数	文件大小	规格书
3页	45K
描述
TRANSISTOR BCX19 MINIREEL 500PCS

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数据手册

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BCX19-MR 数据手册

BCX19

NPN Medium Power Transistor

•

This device is designed for general purpose amplifiers.

Sourced from process 38.

SOT-23

Marking: U1

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector current

CEO

CBO

EBO

5.0

- Continuous

500

°C

T , T

Junction and Storage Temperature

-55 ~ +150

stg

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

= 10mA, I = 0

(BR)CEO

(BR)CES

CBO

= 10µA, I = 0

= 20V, I = 0

100

5.0

µA

= 20V, I = 0, T = 150°C

Emitter Cutoff Current

= 5.0V, I = 0

µA

EBO

ON CHARACTERISTICS

DC Current Gain

= 100mA, V = 1.0V

100

600

= 300mA, V = 1.0V

= 500mA, V = 1.0V

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

= 500mA, I = 50mA

0.62

1.2

CE(sat)

= 500mA, V = 1.0V

BE(on)

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

Units

mW/°C

Total Device Dissipation

Derate above 25°C

300

2.4

Thermal Resistance, Junction to Ambient

417

°C/W

θJA

Rev. A, Octorber 2001

12 3

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