Datasheet > BCW68QLT1

BCW68QLT1

更新时间： 2024-11-08 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	85K
描述
PNP Silicon General Purpose Transistor

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数据手册

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BCW68QLT1 数据手册

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SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Rating

Collector–Emitter Voltage

Symbol

Value

–45

Unit

Vdc

CEO

CBO

EBO

Collector–Base Voltage

Emitter–Base Voltage

–60

Vdc

–5.0

–800

Vdc

Collector Current — Continuous

DEVICE MARKING

mAdc

BCW68GLT1 = DH

THERMAL CHARACTERISTICS

Characteristic

(1)

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

= 25°C

Derate above 25°C

225

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

θJA

(2)

Alumina Substrate,

T = 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

T , T

J stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = –10 mAdc, I = 0)

–45

–60

–5.0

—

Vdc

(BR)CEO

Collector–Emitter Breakdown Voltage (I = –10 µAdc, V

= 0)

(BR)CES

(BR)EBO

Emitter–Base Breakdown Voltage (I = –10 µAdc, I = 0)

Collector Cutoff Current

CES

(V = –45 Vdc, I = 0)

—

–20

–10

nAdc

µAdc

(V = –45 Vdc, I = 0, T = 150°C)

Emitter Cutoff Current (V

= –4.0 Vdc, I = 0)

—

–20

nAdc

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

EBO

Thermal Clad is a trademark of the Bergquist Company

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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