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BCW69LT1 PDF预览

BCW69LT1

更新时间: 2024-09-23 22:14:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 413K
描述
General Purpose Transistors

BCW69LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.44Is Samacsys:N
最大集电极电流 (IC):0.1 A基于收集器的最大容量:7 pF
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:0.225 W认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
VCEsat-Max:0.3 VBase Number Matches:1

BCW69LT1 数据手册

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Order this document  
by BCW69LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
1
3
BASE  
1
2
2
EMITTER  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
–45  
Unit  
Vdc  
V
CEO  
EBO  
Emitter–Base Voltage  
V
–5.0  
–100  
Vdc  
Collector Current — Continuous  
DEVICE MARKING  
I
C
mAdc  
BCW69LT1 = H1; BCW70LT1 = H2  
THERMAL CHARACTERISTICS  
Characteristic  
(1)  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board  
= 25°C  
Derate above 25°C  
P
D
225  
mW  
T
A
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
θJA  
P
D
(2)  
Alumina Substrate,  
T = 25°C  
A
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
θJA  
T , T  
55 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = –2.0 mAdc, I = 0)  
V
–45  
–50  
–5.0  
Vdc  
Vdc  
Vdc  
C
B
(BR)CEO  
Collector–Emitter Breakdown Voltage (I = –100 µAdc, V  
EB  
= 0)  
V
C
(BR)CES  
(BR)EBO  
Emitter–Base Breakdown Voltage (I = –10 µAdc, I = 0)  
V
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= –20 Vdc, I = 0)  
–100  
–10  
nAdc  
µAdc  
E
= –20 Vdc, I = 0, T = 100°C)  
E
A
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina  
Thermal Clad is a trademark of the Bergquist Company  
Motorola, Inc. 1996

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