Datasheet > BCW69LT1

BCW69LT1

更新时间： 2024-09-24 12:23:51

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管光电二极管
页数	文件大小	规格书
7页	417K
描述
General Purpose Transistors

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中文翻译

获取价格

数据手册

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BCW69LT1 数据手册

BCW69LT1

WILLAS

BCW70LT1

GeneralPurposeTransistors

PNP Silicon

Featrues

We declare that the material of product

compliance with RoHS requirements.

COLLECTOR

Pb-Free package is available

RoHS product for packing code suffix ”G”

BASE

Halogen free product for packing code suffix “H”

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _EBO

I _C

Value

– 45

Unit

Vdc

SOT–23

Collector–Emitter Voltage

Emitter–Base Voltage

Collector Current — Continuous

– 5.0

– 100

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J, T_stg

–55 to +150

DEVICE MARKING

BCW69LT1 = H1; BCW70LT1= H2

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I_C= –2.0 mAdc, I_B= 0 )

Collector–Emitter Breakdown Voltage (I_C= –100 µAdc, V _EB= 0 )

Emitter–Base Breakdown Voltage (I _E= –10 µAdc, I _C= 0)

Collector Cutoff Current

V _(BR)CEO

V _(BR)CES

V _(BR)EBO

I _CEO

– 45

– 50

– 5.0

—

Vdc

(V_CE= –20 Vdc, I _E= 0 )

—

– 100

– 10

nAdc

(V_CE= –20 Vdc, I _E= 0 , T_A= 100°C)

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

µAdc

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2012-11

WILLAS ELECTRONIC CORP.

12 3 4 5 6 7

中文翻译

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