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BCW68HRTC PDF预览

BCW68HRTC

更新时间: 2024-11-09 13:05:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管局域网
页数 文件大小 规格书
2页 306K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

BCW68HRTC 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.13
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
参考标准:CECC50002-234表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
最大关闭时间(toff):400 ns最大开启时间(吨):100 ns
Base Number Matches:1

BCW68HRTC 数据手册

 浏览型号BCW68HRTC的Datasheet PDF文件第2页 
PART OBSOLETE - USE BCW68H  
SOT23 PNP SILICON PLANAR  
BCW67  
BCW68  
MEDIUM POWER TRANSISTORS  
ISSUE 4 - JUNE 1996  
PARTMARKING DETAILS –  
BCW67A – DA  
BCW67B – DB  
BCW67C – DC  
BCW68F – DF  
BCW68G – DG  
BCW68H – DH  
BCW67AR – 4W  
BCW67BR – 5W  
BCW67CR – 6W  
BCW68FR – 7T  
BCW68GR – 5T  
BCW68HR – 7N  
E
C
B
COMPLEMENTARY TYPES –  
BCW67 – BCW65  
SOT23  
BCW68 – BCW66  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCES  
VCEO  
VEBO  
ICM  
BCW67  
-45  
BCW68  
-60  
UNIT  
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-32  
-45  
V
-5  
V
Peak Pulse Current(10ms)  
Continuous Collector Current  
Base Current  
-1000  
-800  
-100  
330  
mA  
mA  
mA  
mW  
°C  
IC  
IB  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
Tj:Tstg  
-55 to +150  
3 - 29  

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