Datasheet > BCW68H-T

BCW68H-T

更新时间： 2024-11-09 21:03:23

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
2页	294K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BCW68H-T 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	JESD-609代码：	e3
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

BCW68H-T 数据手册

RECTRON

TECHNICAL SPECIFICATION

SEMICONDUCTOR

BCW68H

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

FEATURES

* Power dissipation

PCM :

* Collector current

ICM :

0.33

W(Tamb=25^OC)

-0.8

* Collector-base voltage

: -60

(BR)CBO

SOT-23

* Operating and storage junction temperature range

T ,Tstg: -55^OC to+150^OC

COLLECTOR

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

0.055(1.40)

0.047(1.20)

BASE

EMITTER

0.006(0.15)

0.003(0.08)

0.043(1.10)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

* Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified.

Single phase , half wave, 60HZ, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )

MAX

TYP

CHARACTERISTICS

SYMBOL

UNITS

MIN

-60

Collector-base breakdown voltage (I = -10µA, I =0)

(BR)CBO

Collector-emitter breakdown voltage (I = -10mA, I =0)

(BR)CEO

-45

Emitter-base breakdown voltage (I = -10µA, I =0)

(BR)EBO

-5

µA

Collector cut-off current (V = -45V, I =0)

CBO

-0.02

Collector cut-off current (V = -4V, I =0)

EBO

µA

-0.02

DC current gain (V = -10V, I = -0.1mA)

DC current gain (V = -1V, I = -10mA)

180

250

DC current gain (V = -1V, I = -100mA)

630

DC current gain (V = -2V, I = -500mA)

100

Collector-emitter saturation voltage(I = -100mA, I = -10mA)

-0.3

-0.7

-1.25

-2

CE(sat)

Collector-emitter saturation voltage(I = -500mA, I = -50mA)

Base - emitter saturation voltage (I = -100mA, I = -10mA)

BE(sat)

100

Base - emitter saturation voltage (I = -500mA, I = -50mA)

MHz

Transition frequency (V = -10V, I = -20mA, f=100MHZ)

Cob

Output capacitance (V = -10V, I = 0, f=1MHZ)

Input capacitance (V = -0.5V, I = 0, f=1MHZ)

Cib

Noise figure (V = -5V, I = -0.2mA, f=1kHz, ∆f=200Hz, RG=1KΩ)

Marking

Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".

2006-3

中文翻译

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与BCW68H-T相关器件

型号	品牌	获取价格	描述	数据表
BCW68HTA	DIODES	获取价格	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BCW68HTC	DIODES	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
BCW68HTR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BCW68HTR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BCW68HTR13LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BCW68HTRLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BCW68L	MOTOROLA	获取价格	Transistor
BCW68LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
BCW68LT1	MOTOROLA	获取价格	Transistor
BCW68QLT1	ETC	获取价格	PNP Silicon General Purpose Transistor

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