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BCW68GLT3G PDF预览

BCW68GLT3G

更新时间: 2024-11-07 12:49:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 113K
描述
General Purpose Transistor PNP Silicon

BCW68GLT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:5 weeks
风险等级:1.51最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BCW68GLT3G 数据手册

 浏览型号BCW68GLT3G的Datasheet PDF文件第2页浏览型号BCW68GLT3G的Datasheet PDF文件第3页 
BCW68GLT1G  
General Purpose Transistor  
PNP Silicon  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
COLLECTOR  
3
1
MAXIMUM RATINGS  
BASE  
Rating  
Symbol  
Value  
45  
Unit  
Vdc  
CollectorEmitterVoltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
2
EMITTER  
60  
Vdc  
V
EBO  
5.0  
800  
Vdc  
Collector Current Continuous  
I
C
mAdc  
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the  
RecommendedOperating Conditions is not implied. Extended exposure to  
stresses above the Recommended Operating Conditions may affect device  
reliability.  
SOT23  
CASE 318  
STYLE 6  
1
2
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
D
225  
mW  
(Note 1) T = 25°C  
DG MG  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
G
Thermal Resistance,  
R
q
JA  
556  
JunctiontoAmbient  
DG  
M
G
= Specific Device Code  
= Date Code*  
= PbFree Package  
Total Device Dissipation  
Alumina Substrate (Note 2)  
P
300  
mW  
D
T = 25°C  
A
(Note: Microdot may be in either location)  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
*Date Code orientation and/or overbar may vary  
dependingupon manufacturing location.  
Thermal Resistance,  
JunctiontoAmbient  
R
q
417  
JA  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
ORDERING INFORMATION  
1. FR5 = 1.0   0.75   0.062 in.  
2. Alumina = 0.4   0.3   0.024 in 99.5% alumina.  
Device  
Package  
Shipping  
BCW68GLT1G  
SOT23  
3000 / Tape & Reel  
(PbFree)  
BCW68GLT3G  
SOT23  
10000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 5  
BCW68GLT1/D  
 

BCW68GLT3G 替代型号

型号 品牌 替代类型 描述 数据表
BCW68GLT1G ONSEMI

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