Datasheet > BCW68GLT1/D

BCW68GLT1/D

更新时间： 2024-11-06 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	38K
描述
General Purpose Transistor

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中文翻译

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数据手册

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BCW68GLT1/D 数据手册

ON Semiconductort

BCW68GLT1

General Purpose Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Symbol

Value

–45

Unit

Vdc

CEO

CBO

EBO

Collector–Base Voltage

Emitter–Base Voltage

–60

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

–5.0

–800

Vdc

Collector Current — Continuous

DEVICE MARKING

BCW68GLT1 = DH

mAdc

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR

Symbol

Max

Unit

(1)

Total Device Dissipation FR-5 Board

225

T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

BASE

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, T = 25°C

(2)

EMITTER

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

T , T

–55 to +150

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = –10 mAdc, I = 0)

(BR)CEO

–45

–60

–5.0

—

Vdc

Collector–Emitter Breakdown Voltage (I = –10 µAdc, V = 0)

(BR)CES

(BR)EBO

Emitter–Base Breakdown Voltage (I = –10 µAdc, I = 0)

Collector Cutoff Current

(V = –45 Vdc, I = 0)

CES

—

–20

–10

nAdc

µAdc

(V = –45 Vdc, I = 0, T = 150°C)

Emitter Cutoff Current (V = –4.0 Vdc, I = 0)

—

–20

nAdc

EBO

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

BCW68GLT1/D

12 3 4

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