Datasheet > BCW68G/E8

BCW68G/E8

更新时间： 2024-09-16 23:34:59

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	31K
描述
BJT

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数据手册

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BCW68G/E8 数据手册

BCW68G

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistor (PNP)

TO-236AB (SOT-23)

.122 (3.1)

.110 (2.8)

.016 (0.4)

Top View

Mounting Pad Layout

0.031 (0.8)

Pin Configuration

1. Base

2. Emitter

3. Collector

0.035 (0.9)

0.079 (2.0)

.037(0.95)

0.037 (0.95)

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Mechanical Data

Features

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Marking Code: DG

• PNP Silicon Epitaxial Planar Transistors

• Suited for low level, low noise, low frequency

applications in hybrid cicuits.

• Low Current, Low Voltage.

Packaging Codes/Options:

• As complementary type, BCW66G NPN

transistor is recommended.

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

–V_CEO

–V_CBO

–V_EBO

–I_C

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current (DC)

800

Peak Collector Current

–I_CM

–I_B

1.0

Base Current (DC)

100

°C

Peak Base Current

–I_BM

P_tot

200

Power Dissipation, T_S= 79°C

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance, Junction to Ambient Air

Thermal Resistance, Junction to Soldering Point

330

T_j

150

T_STG

R_θJA

R_θJS

–65 to +150

≤ 285⁽¹⁾

≤ 215

°C

°C/W

Note: (1) Mounted on FR-4 printed-ciruit board.

Document Number 88173

09-May-02

www.vishay.com

12 3

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