Datasheet > BCW29

BCW29

更新时间： 2024-11-07 08:50:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	40K
描述
PNP General Purpose Transistors

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中文翻译

获取价格

数据手册

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BCW29 数据手册

SMD Type

TransistIoCrs

PNP General Purpose Transistors

BCW29,BCW30

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low current (max. 100 mA).

Low voltage (max. 32 V).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-32

Unit

Collector-emitter voltage

-32

Emitter-base voltage

-5

Collector current

-100

Peak collector current

I^CM

-200

Peak base current

I^BM

-200

Total power dissipation

P^tot

250

Storage temperature

T^stg

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient *

* Transistor mounted on an FR4 printed-circuit board.

Ramb

Rth j-a

-65 to +150

500

K/W

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