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BCW29_99

更新时间: 2024-11-07 08:50:47
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1页 33K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

BCW29_99 数据手册

  
SEMICONDUCTOR  
BCW29/30  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
E
L
B
L
FEATURES  
DIM MILLIMETERS  
Complementary to BCW31/32  
_
+
2.93 0.20  
A
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
1
0.95  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-30  
UNIT  
V
P
P
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-20  
V
M
-5  
V
Collector Current  
-100  
350  
mA  
mW  
1. EMITTER  
2. BASE  
PC *  
Collector Power Dissipation  
Junction Temperature  
3. COLLECTOR  
Tj  
150  
Tstg  
Storage Temperature Range  
-65 150  
SOT-23  
* : Package Mounted On 99.9% Alumina 10  
8
0.6mm.  
Marking  
Lot No.  
Lot No.  
Type Name  
Type Name  
C1  
C2  
BCW29  
BCW30  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
SYMBOL  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
TEST CONDITION  
MIN.  
-30  
-20  
-5  
TYP. MAX. UNIT  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
IC=-10 A  
IC=-2mA  
-
V
IE=-10 A  
VCB=-30V  
VEB=-5V  
-
-100  
-100  
220  
450  
-0.25  
-0.7  
4
nA  
nA  
IEBO  
Emitter Cut-off Current  
-
BCW29  
BCW30  
110  
200  
-
hFE  
VCE=-5V, IC=-2mA  
DC Current Gain  
VCE(sat)  
VBE(ON)  
Cob  
IC=-10mA, IB=-0.5mA  
VCE=-5V, IC=-2mA  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
-0.55  
-
VCB=-10V, IE=0, f=1MHz  
VCE=-5V, IC=-0.2mA  
Collector Output Capacitance  
pF  
Noise Figure  
NF  
-
-
10  
dB  
RS=2k , f=1kHz  
1999. 12. 29  
Revision No : 1  
1/1  

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