Datasheet > BCV72

BCV72

更新时间： 2024-11-12 22:39:31

品牌	Logo	应用领域
德欧泰克 - DIOTEC		晶体晶体管光电二极管
页数	文件大小	规格书
2页	123K
描述
Surface mount Si-Epitaxial PlanarTransistors

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中文翻译

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数据手册

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BCV72 数据手册

BCV 71, BCV 72

NPN

General Purpose Transistors

Surface mount Si-Epitaxial PlanarTransistors

NPN

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

250 mW

±0.1

Plastic case

SOT-23

1.1

2.9

0.4

Kunststoffgehäuse

(TO-236)

Type

Code

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

1.9

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions / Maße in mm

1 = B 2 = E 3 = C

Maximum ratings (T_A= 25ꢀC)

Grenzwerte (T_A= 25ꢀC)

BCV 71, BCV 72

60 V

Collector-Emitter-voltage

Collector-Base-voltage

Emitter-Base-voltage

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (DC)

B open

E open

C open

V_CE0

V_CB0

V_EB0

P_tot

80 V

5 V

250 mW ¹)

100 mA

I_C

Peak Collector current – Kollektor-Spitzenstrom I_CM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

150ꢀC

- 65…+ 150ꢀC

Characteristics (T_j= 25ꢀC)

Kennwerte (T_j= 25ꢀC)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I_E= 0, V_CB= 20 V

I_CB0

–

100 nA

10 ꢀA

I_E= 0, V_CB= 20 V, T_j= 100ꢀC

Emitter-Base cutoff current – Emitterreststrom

I_C= 0, V_EB= 5 V

I_EB0

–

100 nA

DC current gain – Kollektor-Basis-Stromverhältnis ²)

BCV 71

BCV 72

BCV 71

BCV 72

h_FE

–

110

200

150

–

220

450

V_CE= 5 V, I_C= 10 ꢀA

V_CE= 5 V, I_C= 2 mA

–

)

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluß

Tested with pulses t_p= 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen t_p= 300 ꢀs, Schaltverhältnis ꢀ 2%

01.11.2003

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