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BCV72LEADFREE PDF预览

BCV72LEADFREE

更新时间: 2024-11-13 12:58:35
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
2页 328K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BCV72LEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.13Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BCV72LEADFREE 数据手册

 浏览型号BCV72LEADFREE的Datasheet PDF文件第2页 
BCV72  
www.centralsemi.com  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BCV72 is a Silicon  
NPN Transistor manufactured by the epitaxial planar  
process, epoxy molded in a surface mount package,  
designed for general purpose applications.  
MARKING CODE: K8  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
80  
60  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
5.0  
V
Continuous Collector Current  
Peak Collector Current  
I
100  
mA  
mA  
mW  
°C  
C
I
200  
CM  
P
Power Dissipation  
350  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
μA  
V
I
I
V
V
=20V  
100  
10  
CBO  
CBO  
CB  
CB  
=20V, T =100°C  
A
BV  
BV  
BV  
I =2.0mA  
60  
80  
CEO  
CBO  
C
I =10μA  
V
C
I =10μA  
5.0  
V
EBO  
C
V
V
I =10mA, I =0.5mA  
250  
700  
450  
mV  
mV  
CE(SAT)  
BE(ON)  
FE  
C
B
V
=5.0V, I =2.0mA  
550  
200  
CE  
CE  
CB  
CE  
CE  
C
h
V
V
V
V
=5.0V, I =2.0mA  
C
C
=10V, I =0, f=1.0MHz  
2.5  
pF  
ob  
E
f
=5.0V, I =10mA, f=35MHz  
300  
MHz  
T
C
NF  
=5.0V, I =200μA, R =2.0kΩ  
C S  
f=1.0kHz, B=200Hz  
10  
dB  
R1 (20-November 2009)  

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