Datasheet > BCR562Q62702C2356

BCR562Q62702C2356

更新时间： 2024-11-23 23:34:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	39K
描述
TRANSISTORS DIGITAL SOT23

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BCR562Q62702C2356 数据手册

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BCR 562

PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

Ω

• Built in bias resistor (R =4.7k , R =4.7k )

Type

Marking Ordering Code

XUs Q62702-C2356

Pin Configuration

Package

BCR 562

1=B

2=E

3=C

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Input on Voltage

CEO

CBO

EBO

i(on)

DC collector current

500

°C

Total power dissipation, T = 79 °C

330

tot

Junction temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction ambient

325

215

K/W

thJA

Junction - soldering point

thJS

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm²Cu

Semiconductor Group

Nov-27-1996

12 3 4

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