Datasheet > BCR583_07

BCR583_07

更新时间： 2024-09-27 12:50:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	138K
描述
PNP Silicon Digital Transistor

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中文翻译

获取价格

数据手册

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BCR583_07 数据手册

BCR583

PNP Silicon Digital Transistor

• Built in bias resistor (R = 10 kΩ, R = 10 kΩ)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

R₁

R₂

EHA07183

Type

BCR583

Marking

XMs

Pin Configuration

Package

SOT23

1=B

2=E

3=C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Input forward voltage

Input reverse voltage

Collector current

CEO

CBO

i(fwd)

i(rev)

500

330

Total power dissipation-

tot

T ≤ 79 °C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 215

Unit

K/W

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-07-24

12 3 4 5 6

中文翻译

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