Datasheet > BCR48PN_07

BCR48PN_07

更新时间： 2022-10-15 10:12:58

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体数字晶体管
页数	文件大小	规格书
8页	148K
描述
NPN/PNP Silicon Digital Transistor Array

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数据手册

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BCR48PN_07 数据手册

BCR48PN

NPN/PNP Silicon Digital Transistor Array

• Switching circuit, inverter, interface circuit,

driver circuit

• Two (galvanic) internal isolated NPN/PNP

Transistors in one package

• Built in bias resistor

NPN: R = 47kΩ, R = 47kΩ

PNP: R = 2.2kΩ, R = 47kΩ

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

R₂

R₁

TR2

Marking on SOT-363 package

TR1

R₁

Top View

(for example W1s)

corresponds to pin 1 of device

R₂

5 4

W1s

EHA07176

Position in tape: pin 1

opposite of feed hole side

1 2 3

Direction of Unreeling

EHA07193

Type

BCR48PN

Marking

WTs

Pin Configuration

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1

Package

SOT363

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

CEO

CBO

Input forward voltage

Input reverse voltage

DC collector current

NPN

PNP

NPN

PNP

NPN

PNP

100

250

150

i(fwd)

i(rev)

°C

Total power dissipation, T = 115 °C

Junction temperature

tot

Storage temperature

-65...+150

stg

¹Pb-containing package may be available upon special request

2007-07-24

12 3 4 5 6 7 8

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