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BCR48PNH6327XTSA1 PDF预览

BCR48PNH6327XTSA1

更新时间: 2024-11-20 21:01:07
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
8页 535K
描述
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SOT-363, 6 PIN

BCR48PNH6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:6.38
其他特性:BUILT-IN BIAS RESISTOR RATIO 1最大集电极电流 (IC):0.07 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BCR48PNH6327XTSA1 数据手册

 浏览型号BCR48PNH6327XTSA1的Datasheet PDF文件第2页浏览型号BCR48PNH6327XTSA1的Datasheet PDF文件第3页浏览型号BCR48PNH6327XTSA1的Datasheet PDF文件第4页浏览型号BCR48PNH6327XTSA1的Datasheet PDF文件第5页浏览型号BCR48PNH6327XTSA1的Datasheet PDF文件第6页浏览型号BCR48PNH6327XTSA1的Datasheet PDF文件第7页 
BCR48PN  
NPN/PNP Silicon Digital Transistor Array  
Switching circuit, inverter, interface circuit,  
driver circuit  
4
5
3
2
6
Two (galvanic) internal isolated NPN/PNP  
1
Transistors in one package  
Built in bias resistor  
NPN: R = 47k, R = 47kΩ  
1
2
PNP: R = 2.2k, R = 47kΩ  
1
2
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
C1  
6
B2  
5
E2  
4
R2  
R1  
TR2  
Marking on SOT-363 package  
TR1  
R1  
Top View  
(for example W1s)  
corresponds to pin 1 of device  
R2  
6
5 4  
1
2
3
W1s  
E1  
B1  
C2  
EHA07176  
Position in tape: pin 1  
opposite of feed hole side  
1 2 3  
Direction of Unreeling  
EHA07193  
Type  
BCR48PN  
Marking  
WTs  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1  
Package  
SOT363  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
50  
50  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
Input forward voltage  
Input reverse voltage  
Input reverse voltage  
DC collector current  
DC collector current  
V
V
V
V
V
V
CEO  
CBO  
i(fwd)  
i(fwd)  
i(rev)  
i(rev)  
NPN  
PNP  
NPN  
PNP  
NPN  
PNP  
80  
20  
10  
5
70  
100  
250  
150  
I
mA  
C
I
C
mW  
°C  
Total power dissipation, T = 115 °C  
Junction temperature  
Storage temperature  
P
S
tot  
T
j
T
-65...+150  
stg  
2011-07-28  
1

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