Datasheet > BCR4AS-16LH-B00

BCR4AS-16LH-B00

更新时间： 2024-11-24 07:16:11

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
7页	110K
描述
Triac Medium Power Use

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数据手册

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BCR4AS-16LH-B00 数据手册

Preliminary Datasheet

BCR4AS-16LH

R07DS0331EJ0100

Rev.1.00

Triac

Medium Power Use

Apr 28, 2011

Features

•

I_{T (RMS)}: 4 A

_DRM: 800 V

_FGTI, I_RGTI, I_{RGT III}: 35 mA or 10mA(I_GTitem:1)

High Commutation

•

The Product guaranteed maximum junction

temperature 150°C

Non-Insulated Type

Planar Type

•

Outline

RENESAS Package code: PRSS0004ZG-A

Package name : MP-3A)

(

2, 4

1. T₁Terminal

2. T₂Terminal

3. Gate Terminal

4. T₂Terminal

Applications

Switching mode power supply, small motor control, heater control, and other general purpose AC power control

applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

Non-repetitive peak off-state voltage^Note1

Notes: 1. Gate open.

V_DRM

V_DSM

800

960

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

I_TSM

I²t

Commercial frequency, sine full wave

360°conduction, Tc = 129°C ^Note3

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

Surge on-state current

I²t for fusion

3.7

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.3

Peak gate current

Junction Temperature

Storage temperature

Mass

–40 to +150

0.32

°C

Tstg

—

Typical value

R07DS0331EJ0100 Rev.1.00

Apr 28, 2011

Page 1 of 6

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