BCR39

更新时间： 2024-11-08 22:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体数字晶体管
页数	文件大小	规格书
5页	56K
描述
NPN/PNP Silicon Digital Transistor Array

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中文翻译

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数据手册

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BCR39 数据手册

BCR39PN

NPN/PNP Silicon Digital Transistor Array

Switching circuit, inverter, interface circuit,

driver circuit

Two (galvanic) internal isolated NPN/PNP

Transistors in one package

Built in bias resistor (R = 22k )

VPS05604

Tape loading orientation

Marking on SOT-363 package

(for example W1s)

corresponds to pin 1 of device

Top View

6 5 4

R₁

TR2

W1s

TR1

Position in tape: pin 1

opposite of feed hole side

1 2 3

Direction of Unreeling

EHA07193

EHA07290

Type

Marking

Pin Configuration

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1

Package

SOT363

BCR39PN

W3s

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Input on Voltage

CEO

CBO

EBO

i(on)

DC collector current

100

250

150

°C

Total power dissipation, T = 115 °C

tot

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Junction - soldering point

140

K/W

thJS

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Nov-29-2001

12 3 4 5

中文翻译

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