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BCR39 PDF预览

BCR39

更新时间: 2024-11-25 22:39:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体数字晶体管
页数 文件大小 规格书
5页 56K
描述
NPN/PNP Silicon Digital Transistor Array

BCR39 数据手册

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BCR39PN  
NPN/PNP Silicon Digital Transistor Array  
4
5
Switching circuit, inverter, interface circuit,  
driver circuit  
6
Two (galvanic) internal isolated NPN/PNP  
Transistors in one package  
3
2
Built in bias resistor (R = 22k )  
1
1
VPS05604  
Tape loading orientation  
C1  
6
B2  
5
E2  
4
Marking on SOT-363 package  
(for example W1s)  
corresponds to pin 1 of device  
Top View  
6 5 4  
R1  
R1  
TR2  
W1s  
TR1  
Position in tape: pin 1  
opposite of feed hole side  
1 2 3  
1
2
3
Direction of Unreeling  
E1  
B1  
C2  
EHA07193  
EHA07290  
Type  
Marking  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1  
Package  
SOT363  
BCR39PN  
W3s  
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on Voltage  
V
V
V
V
V
CEO  
CBO  
EBO  
i(on)  
50  
5
30  
DC collector current  
100  
250  
150  
mA  
mW  
°C  
I
C
Total power dissipation, T = 115 °C  
P
tot  
S
Junction temperature  
Storage temperature  
T
j
-65 ... 150  
T
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
140  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Nov-29-2001  

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