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BCR39PN PDF预览

BCR39PN

更新时间: 2024-11-25 22:26:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
5页 56K
描述
NPN/PNP Silicon Digital Transistor Array

BCR39PN 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G6湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BCR39PN 数据手册

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BCR39PN  
NPN/PNP Silicon Digital Transistor Array  
4
5
Switching circuit, inverter, interface circuit,  
driver circuit  
6
Two (galvanic) internal isolated NPN/PNP  
Transistors in one package  
3
2
Built in bias resistor (R = 22k )  
1
1
VPS05604  
Tape loading orientation  
C1  
6
B2  
5
E2  
4
Marking on SOT-363 package  
(for example W1s)  
corresponds to pin 1 of device  
Top View  
6 5 4  
R1  
R1  
TR2  
W1s  
TR1  
Position in tape: pin 1  
opposite of feed hole side  
1 2 3  
1
2
3
Direction of Unreeling  
E1  
B1  
C2  
EHA07193  
EHA07290  
Type  
Marking  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1  
Package  
SOT363  
BCR39PN  
W3s  
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on Voltage  
V
V
V
V
V
CEO  
CBO  
EBO  
i(on)  
50  
5
30  
DC collector current  
100  
250  
150  
mA  
mW  
°C  
I
C
Total power dissipation, T = 115 °C  
P
tot  
S
Junction temperature  
Storage temperature  
T
j
-65 ... 150  
T
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
140  
K/W  
thJS  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Nov-29-2001  

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