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BCR3AM PDF预览

BCR3AM

更新时间: 2024-11-08 22:39:31
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网
页数 文件大小 规格书
5页 101K
描述
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR3AM 数据手册

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MITSUBISHI SEMICONDUCTOR TRIAC  
BCR3AM  
LOW POWER USE  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR3AM  
OUTLINE DRAWING  
in mm  
10 MAX  
0.5  
4
φ3.2±0.1  
TYPE NAME  
VOLTAGE  
CLASS  
1.2±0.1  
0.8  
0.8  
0.5  
1.5 MIN  
2.5 2.5  
Measurement point of  
case temperature  
1 2 3  
10 MAX  
2 4  
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
4
• IT (RMS) ........................................................................3A  
• VDRM ..............................................................400V/600V  
• IFGT !, IRGT !, IRGT # ......................... 30mA (15mA)  
GATE TERMINAL  
TERMINAL  
3
T
2
1
6  
TO-202  
APPLICATION  
Contactless AC switches, light dimmer, electric blankets,  
control of household equipment such as electric fan,  
solenoid drivers, small motor control, other general  
purpose control applications  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
400  
500  
600  
720  
V
V
1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
Unit  
A
IT (RMS)  
ITSM  
Commercial frequency, sine full wave 360° conduction, Tc=86°C  
3
60Hz sinewave 1 full cycle, peak value, non-repetitive  
30  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
3.7  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
3
W
W
V
0.3  
6
Peak gate current  
0.5  
A
Tj  
Junction temperature  
Storage temperature  
Weight  
–40 ~ +125  
–40 ~ +125  
1.6  
°C  
°C  
g
Tstg  
Typical value  
1. Gate open.  
Feb.1999  

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