Datasheet > BCR20AM-12LA-A8

BCR20AM-12LA-A8

更新时间： 2024-01-02 22:05:26

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
7页	108K
描述
Triac Medium Power Use

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BCR20AM-12LA-A8 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	HTS代码：	8541.30.00.80
风险等级：	5.84	换向电压的临界上升率-最小值：	10 V/us
最大直流栅极触发电流：	30 mA	最大直流栅极触发电压：	1.5 V
最大漏电流：	2 mA	最高工作温度：	125 °C
最低工作温度：	-40 °C	最大均方根通态电流：	20 A
断态重复峰值电压：	600 V	子类别：	TRIACs
表面贴装：	NO	触发设备类型：	TRIAC

BCR20AM-12LA-A8 数据手册

BCR20AM-12LA

Parameter

Symbo

Ratings

Unit

Conditions

RMS on-state current

Surge on-state current

I²t for fusing

I_{T (RMS)}

I_TSM

I²t

Commercial frequency, sine full wave

360° conduction, Tc = 109°C^Note3

200

60Hz sinewave 1 full cycle, peak value,

non-repetitive

167

A²s

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.5

Peak gate current

Junction temperature

Storage temperature

Mass

– 40 to +125

2.0

°C

Tstg

—

Typical value

Notes: 1. Gate open.

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

I_DRM

Min.

—

Typ.

Max.

2.0

Unit

Test conditions

—

Tj = 125°C, V_DRMapplied

V_TM

—

1.5

Tc = 25°C, I_TM= 30 A,

Instantaneous measurement

Gate trigger voltage^Note2

ΙΙ

ΙΙΙ

V_FGT

—

1.5

Tj = 25°C, V_D= 6 V, R_L= 6 Ω,

R_G= 330 Ω

V_RGT

1.5

ΙΙΙ

Gate trigger current^Note2

I_FGT

30^Note6

Tj = 25°C, V_D= 6 V, R_L= 6 Ω,

R_G= 330 Ω

ΙΙ

ΙΙΙ

I_RGT

ΙΙΙ

Gate non-trigger voltage

Thermal resistance

V_GD

0.2

—

0.8

—

Tj = 125°C, V_D= 1/2 V_DRM

Junction to case^{Note3 Note4}

Tj = 125°C

R_{th (j-c)}

(dv/dt)c

°C/W

V/µs

Critical-rate of rise of off-state

commutating voltage^Note5

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T₂tab 1.5 mm away from the molded case.

4. The contact thermal resistance R_{th (c-f)}in case of greasing is 1.0°C/W.

5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

6. High sensitivity (I_GT≤ 20 mA) is also available. (I_GTitem: 1)

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125°C

(di/dt)c

2. Rate of decay of on-state commutating current

(di/dt)c = –10 A/ms

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

REJ03G0299-0300 Rev.3.00 Nov 30, 2007

Page 2 of 6

123 4 5 6 7

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与BCR20AM-12LA-A8相关器件

型号	品牌	描述	获取价格	数据表
BCR20AM-12LB	RENESAS	Triac Medium Power Use (The product guarantee	获取价格
BCR20AM-12LB-A8	RENESAS	Triac Medium Power Use (The product guarantee	获取价格
BCR20AM12R	ETC	TRIAC\|600V V(DRM)\|20A I(T)RMS\|TO-220AB	获取价格
BCR20AM8	ETC	TRIAC\|400V V(DRM)\|20A I(T)RMS\|TO-220AB	获取价格
BCR20AM-8	POWEREX	Triac 20 Ampere/400-600 Volts	获取价格
BCR20AM-8	MITSUBISHI	TRIAC, 400V V(DRM), 20A I(T)RMS, TO-220,	获取价格

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