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BCR20C PDF预览

BCR20C

更新时间: 2024-11-25 22:39:31
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
5页 94K
描述
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

BCR20C 数据手册

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MITSUBISHI SEMICONDUCTOR TRIAC  
BCR20A, BCR20B, BCR20C, BCR20E  
MEDIUM POWER USE  
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE  
Dimensions  
BCR20A, BCR20B, BCR20C, BCR20E  
OUTLINE DRAWING  
in mm  
1
φ2.0 MIN  
3
1
3
2
φ8.7 MAX  
φ11 MAX  
2
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
• IT (RMS) ...................................................................... 20A  
• VDRM ..............................................................400V/500V  
• IFGT !, IRGT !, IRGT # ...........................................30mA  
GATE TERMINAL  
BCR20A  
APPLICATION  
Contactless AC switches, light dimmer,  
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,  
solid state relay  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
400  
600  
500  
700  
V
V
1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
20  
Unit  
A
BCR20A, B, C  
BCR20E  
Tc=98°C  
Tb=64°C  
Commercial frequency, sine full  
IT (RMS)  
ITSM  
wave, 360° conduction  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
220  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
203  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5.0  
0.5  
W
W
V
10  
Peak gate current  
2.0  
A
Tj  
Junction temperature  
Storage temperature  
–20 ~ +125  
–20 ~ +125  
°C  
°C  
Tstg  
1. Gate open.  
Feb.1999  

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