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BCR198W PDF预览

BCR198W

更新时间: 2024-11-24 22:54:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关小信号双极晶体管数字晶体管光电二极管驱动
页数 文件大小 规格书
4页 39K
描述
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR198W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.43Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):190 MHz
Base Number Matches:1

BCR198W 数据手册

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BCR 198W  
PNP Silicon Digital Transistor  
• Switching circuit, inverter, interface circuit,  
driver circuit  
• Built in bias resistor (R = 47k , R = 47k )  
1
2
Type  
Marking Ordering Code  
WRs Q62702-C2283  
Pin Configuration  
Package  
BCR 198W  
1 = B  
2 = E  
3 = C  
SOT-323  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on Voltage  
V
CEO  
V
CBO  
V
EBO  
V
i(on)  
50  
V
50  
10  
50  
DC collector current  
I
70  
mA  
mW  
°C  
C
Total power dissipation, T = 124°C  
P
250  
S
tot  
j
Junction temperature  
Storage temperature  
T
T
150  
- 65 ... + 150  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
240  
K/W  
thJA  
Junction - soldering point  
105  
thJS  
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu  
Semiconductor Group  
1
Nov-27-1996  

BCR198W 替代型号

型号 品牌 替代类型 描述 数据表
BCR198S INFINEON

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