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BCR179T PDF预览

BCR179T

更新时间: 2024-11-26 22:48:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
7页 460K
描述
PNP Silicon Digital Transistor

BCR179T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-75包装说明:SC-75, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

BCR179T 数据手册

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BCR179.../SEMB4  
PNP Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit.  
Built in bias resistor (R = 10k)  
1
For 6-PIN packages: two (galvanic) internal  
isolated transistors with good matching  
in one package  
BCR179F/L3  
BCR179T  
SEMB4  
C1  
6
B2  
5
E2  
4
C
3
R1  
R1  
R1  
TR2  
TR1  
1
2
1
2
3
B
E
E1  
B1  
C2  
EHA07180  
EHA07266  
Type  
Marking  
Pin Configuration  
Package  
BCR179F  
BCR179L3  
BCR179T  
SEMB4  
WWs  
WW  
WWs  
WW  
1=B 2=E 3=C  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
-
-
-
TSFP-3  
TSLP-3-4  
SC75  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666  
May-17-2004  
1

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