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BCR148SQ62702C2562 PDF预览

BCR148SQ62702C2562

更新时间: 2024-11-08 23:34:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 48K
描述
TRANSISTORS DIGITAL SOT363

BCR148SQ62702C2562 数据手册

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BCR 148S  
NPN Silicon Digital Transistor Array  
• Switching circuit, inverter, interface circuit,  
driver circuit  
• Two (galvaniv) internal isolated Transistors  
driver circuit  
• Built in bias resistor (R =47k , R =47K )  
1
2
Type  
Marking Ordering Code Pin Configuration  
Package  
BCR 148S WEs  
Q62702-C2417 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on Voltage  
V
CEO  
V
CBO  
V
EBO  
V
i(on)  
50  
V
50  
10  
50  
DC collector current  
I
70  
mA  
mW  
°C  
C
Total power dissipation, T = 115°C  
P
250  
S
tot  
Junction temperature  
Storage temperature  
T
T
150  
j
- 65 ... + 140  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
275  
140  
K/W  
thJA  
Junction - soldering point  
thJS  
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu  
Semiconductor Group  
1
Nov-26-1996  

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