BCR133W

更新时间： 2024-02-15 08:51:56

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关数字晶体管驱动
页数	文件大小	规格书
4页	38K
描述
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

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BCR133W 数据手册

BCR 133W

Electrical Characteristics at T =25°C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

DC Characteristics

Collector-emitter breakdown voltage

(BR)CEO

(BR)CBO

CBO

I = 100 µA, I = 0

Collector-base breakdown voltage

I = 10 µA, I = 0

Collector cutoff current

= 40 V, I = 0

100

Emitter cutoff current

= 10 V, I = 0

EBO

0.75

DC current gain

I = 5 mA, V = 5 V

Collector-emitter saturation voltage 1)

I = 10 mA, I = 0.5 mA

CEsat

i(off)

0.3

1.5

Input off voltage

I = 100 µA, V = 5 V

0.8

Input on Voltage

I = 2 mA, V = 0.3 V

i(on)

2.5

Ω

Input resistor

Resistor ratio

R /R

0.9

1.1

AC Characteristics

Transition frequency

MHz

I = 10 mA, V = 5 V, f = 100 MHz

130

Collector-base capacitance

= 10 V, f = 1 MHz

1) Pulse test: t < 300 s; D < 2%

Semiconductor Group

Nov-26-1996

123 4

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BCR133W 替代型号

型号	品牌	替代类型	描述	数据表
BCR133WE6327	INFINEON	完全替代	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
BCR148W	INFINEON	完全替代	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir
BCR119S	INFINEON	类似代替	NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driv

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