是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | End Of Life | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.42 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 70 | JESD-30 代码: | R-PDSO-G3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BCR141W | INFINEON |
完全替代 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir | |
BCR112W | INFINEON |
完全替代 |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver cir |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCR135WE6327 | ROCHESTER |
获取价格 |
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
BCR135WE6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR135WE6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
BCR135WQ62702C2287 | INFINEON |
获取价格 |
TRANSISTOR DIGITAL SOT323 | |
BCR139 | INFINEON |
获取价格 |
NPN Silicon Digital Transistor | |
BCR139F | INFINEON |
获取价格 |
NPN Silicon Digital Transistor | |
BCR139F-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon | |
BCR139F-E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon | |
BCR139L3 | INFINEON |
获取价格 |
NPN Silicon Digital Transistor | |
BCR139L3E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon |