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BCR135W PDF预览

BCR135W

更新时间: 2024-11-20 22:48:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关数字晶体管驱动
页数 文件大小 规格书
4页 39K
描述
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

BCR135W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.42
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BCR135W 数据手册

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BCR 135W  
NPN Silicon Digital Transistor  
• Switching circuit, inverter, interface circuit,  
driver circuit  
• Built in bias resistor (R =10k , R2=47K )  
1
Type  
Marking Ordering Code  
WJs Q62702-C2287  
Pin Configuration  
Package  
BCR 135W  
1 = B  
2 = E  
3 = C  
SOT-323  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on Voltage  
V
CEO  
V
CBO  
V
EBO  
V
i(on)  
50  
V
50  
6
20  
DC collector current  
I
100  
mA  
mW  
°C  
C
Total power dissipation, T = 124°C  
P
250  
S
tot  
j
Junction temperature  
Storage temperature  
T
T
150  
- 65 ... + 150  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
240  
K/W  
thJA  
Junction - soldering point  
105  
thJS  
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu  
Semiconductor Group  
1
Nov-26-1996  

BCR135W 替代型号

型号 品牌 替代类型 描述 数据表
BCR141W INFINEON

完全替代

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir
BCR112W INFINEON

完全替代

NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver cir

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