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BCR135S PDF预览

BCR135S

更新时间: 2024-11-20 22:48:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关小信号双极晶体管数字晶体管光电二极管驱动
页数 文件大小 规格书
4页 48K
描述
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

BCR135S 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:End Of Life零件包装代码:SOT-363
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.42Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G6
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BCR135S 数据手册

 浏览型号BCR135S的Datasheet PDF文件第2页浏览型号BCR135S的Datasheet PDF文件第3页浏览型号BCR135S的Datasheet PDF文件第4页 
BCR 135S  
NPN Silicon Digital Transistor Array  
• Switching circuit, inverter, interface circuit,  
driver circuit  
• Two (galvanic) internal isolated Transistors  
in one package  
• Built in bias resistor (R =10k , R =47k )  
1
2
Type  
Marking Ordering Code Pin Configuration  
Package  
BCR 135S WJs  
UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on Voltage  
V
CEO  
V
CBO  
V
EBO  
V
i(on)  
50  
V
50  
6
20  
DC collector current  
I
100  
mA  
mW  
°C  
C
Total power dissipation, T = 115°C  
P
250  
S
tot  
Junction temperature  
Storage temperature  
T
T
150  
j
- 65 ... + 150  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
275  
140  
K/W  
thJA  
Junction - soldering point  
thJS  
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu  
Semiconductor Group  
1
Nov-26-1996  

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