Datasheet > BCP56

BCP56

更新时间： 2024-10-04 14:53:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1233K
描述
SOT-223

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数据手册

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BCP56 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223(8R) Plastic-Encapsulate Transistors

SOT-223

BCP54,55,56 TRANSISTOR (NPN)

FEATURES

For AF driver and output stages

1. BASE

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP51 ... BCP53 (PNP)

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

BCP54

BCP55

BCP56

100

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Peak Pulse Collector Current

Base Current-Continuous

Peak Pulse Base Current

Collector Power Dissipation

I_CM

I_B

100

200

1.5

I_BM

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

R_θJA

Thermal Resistance Junction to Ambient

83.3

℃/W

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

BCP54

BCP55

BCP56

BCP54

BCP55

BCP56

V_(BR)CBO

I_C= 0.1mA,I_E=0

100

Collector-emitter breakdown voltage

V_(BR)CEO

I_C= 10mA,I_B=0

Base-emitter breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_E= 10μA,I_C=0

V_CB= 30 V, I_E=0

100

250

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE

V_CE= 2V, I_C=5mA

V_CE= 2V, I_C=150m A

V_CE= 2V, I_C=500m A

I_C=500mA,I_B=50mA

V_CE=2V, I_C=500m A

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

0.5

Transition frequency

f_T

V_CE=10V,I_C=50mA,f=100MHz

100

MHz

CLASSIFICATION OF h_FE(2)

BCP54-10, BCP55-10, BCP56-10

63-160

BCP54-16, BCP55-16, BCP56-16

100-250

Rank

Range

Marking

BCP54-10, BCP55-10, BCP56-10

BCP54-16, BCP55-16, BCP56-16

www.jscj-elec.com

Rev. - 2.1

12 3 4

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