5秒后页面跳转
BCP3669_15 PDF预览

BCP3669_15

更新时间: 2024-11-12 01:20:59
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
2页 191K
描述
NPN Plastic-Encapsulate Transistor

BCP3669_15 数据手册

 浏览型号BCP3669_15的Datasheet PDF文件第2页 
BCP3669  
2 A , 80 V  
NPN Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
oHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-89  
Small Flat Package.  
Large Current Capacity.  
High DC Current Gain  
4
1
2
3
A
E
C
APPLICATION  
LF Amplifiers, Various Drivers, Muting Circuit  
B
D
F
G
H
K
MARKING  
J
L
Millimeter  
Min. Max.  
Millimeter  
3669  
REF.  
REF.  
Min.  
Max.  
ꢀꢀꢀꢀ  
Date Code  
A
B
C
D
4.40  
3.94  
1.40  
2.30  
4.60  
4.25  
1.60  
2.60  
G
H
J
0.40  
0.58  
Collector  
1.50 TYP  
3.00 TYP  
2
K
0.32  
0.35  
0.52  
0.44  
E
F
1.50  
0.89  
1.70  
1.20  
L
PACKAGE INFORMATION  
1
Base  
Package  
MPQ  
Leader Size  
SOT-89  
1K  
7 inch  
3
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
80  
80  
V
5
V
Continuous Collector Current  
Total Power Dissipation  
2
A
PD  
1
W
°C  
Junction, Storage Temperature  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
Typ  
Max  
Unit  
V
Test condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
80  
-
-
IC=100µA, IE=0  
IC=100µA, IB=0  
IE=100µA, IC=0  
VCB=80V, IE=0  
VBE=5V, IC=0  
80  
-
-
V
5
-
-
V
-
-
1
µA  
µA  
V
Emitter Cut-Off Current  
IEBO  
-
-
-
1
Collector-emitter saturation voltage 1  
Base-emitter saturation voltage1  
VCE(sat)  
VBE(sat)  
-
0.5  
IC=1A, IB=50mA  
IC=1A, IB=50mA  
VCE=2V, IC=500mA  
VCE=2V, IC=1.5A  
-
-
1.2  
V
180  
-
240  
DC Current Gain1  
hFE  
40  
-
-
-
-
-
-
-
Transition Frequency  
Collector Output Capacitance  
Turn on  
fT  
100  
30  
0.2  
1
MHz VCE=2V, IC=500mA  
Cob  
TON  
TSTG  
-
pF  
VCB=10V, f=1MHz  
VCC=30V, RL=30,  
IC=1A,  
IB1= -IB1=50mA  
Duty Cycle1%  
-
Storage time  
-
µS  
Fall time  
Note:  
Tf  
-
0.2  
-
1. Pulse Test: Pulse Width380µs, Duty Cycle2%  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
27-Oct-2014 Rev. A  
Page 1 of 2  

与BCP3669_15相关器件

型号 品牌 获取价格 描述 数据表
BCP3669_17 SECOS

获取价格

NPN Plastic-Encapsulate Transistor
BCP3669-C SECOS

获取价格

NPN Plastic-Encapsulate Transistor
BCP-381-10GN PHOENIX

获取价格

Barrier Strip Terminal Block,
BCP-381-2BK PHOENIX

获取价格

Barrier Strip Terminal Block
BCP-381-2GN PHOENIX

获取价格

Barrier Strip Terminal Block
BCP-381-2GY PHOENIX

获取价格

Barrier Strip Terminal Block
BCP-381-4BK PHOENIX

获取价格

Barrier Strip Terminal Block,
BCP-381-4GY PHOENIX

获取价格

Barrier Strip Terminal Block
BCP-381-5BK PHOENIX

获取价格

Barrier Strip Terminal Block,
BCP-381-7GN PHOENIX

获取价格

Barrier Strip Terminal Block