5秒后页面跳转
BCP29 PDF预览

BCP29

更新时间: 2024-09-22 22:27:23
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管IOT
页数 文件大小 规格书
2页 131K
描述
Surface mount Si-Epitaxial PlanarTransistors

BCP29 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.57Is Samacsys:N
湿度敏感等级:1Base Number Matches:1

BCP29 数据手册

 浏览型号BCP29的Datasheet PDF文件第2页 
BCP 29, BCP 49  
NPN  
Darlington Transistors  
NPN  
Surface mount Si-Epitaxial PlanarTransistors  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
6.5±0.2  
3±0.1  
Power dissipation – Verlustleistung  
1.5 W  
1.65  
Plastic case  
SOT-223  
4
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
0.04 g  
3
1
2
Plastic material has UL classification 94V-0  
0.7  
Gehäusematerial UL94V-0 klassifiziert  
2.3  
3.25  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B1 2, 4 = C 3 = E2  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BCP 29  
30 V  
40 V  
BCP 49  
60 V  
80 V  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
B open  
E open  
C open  
VCE0  
VCB0  
VEB0  
Ptot  
10 V  
Power dissipation – Verlustleistung  
1.5 W 1)  
500 mA  
800 mA  
100 mA  
200 mA  
150C  
Collector current – Kollektorstrom (DC)  
Peak Collector current – Kollektor-Spitzenstrom ICM  
Base current – Basisstrom (DC)  
Peak Base current – Basisstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
IC  
IB  
IBM  
Tj  
TS  
- 65…+ 150C  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Min.  
Typ.  
Max.  
Collector-Base cutoff current – Kollektorreststrom  
IE = 0, VCB = 30 V  
IE = 0, VCB = 60 V  
IE = 0, VCB = 30 V, TA = 150C  
IE = 0, VCB = 60 V, TA = 150C  
BCP 29  
BCP 49  
BCP 29  
BCP 49  
ICB0  
100 nA  
100 nA  
10 A  
10 A  
ICB0  
ICB0  
ICB0  
Emitter-Base cutoff current – Emitterreststrom  
IC = 0, VEB = 5 V  
IEB0  
100 nA  
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
4
01.11.2003  

BCP29 替代型号

型号 品牌 替代类型 描述 数据表
BCP29 INFINEON

功能相似

NPN Silicon Darlington Transistors (For general AF applications High collector current Hig

与BCP29相关器件

型号 品牌 获取价格 描述 数据表
BCP29E6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BCP29E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BCP-3.3/15-2.5/15-D24N-C MURATA

获取价格

DC-DC Regulated Power Supply Module, 2 Output, Hybrid, ROHS COMPLIANT, HALF BRICK PACKAGE-
BCP-3.3/15-2.5/15-D24NL2 MURATA

获取价格

DC-DC Regulated Power Supply Module, 2 Output, 50W, Hybrid, HALF BRICK PACKAGE-10
BCP-3.3/15-2.5/15-D48-C MURATA

获取价格

DC-DC Regulated Power Supply Module, 2 Output, Hybrid, ROHS COMPLIANT, HALF BRICK PACKAGE-
BCP-3.3/15-2.5/15-D48N-C MURATA

获取价格

DC-DC Regulated Power Supply Module, 2 Output, Hybrid, ROHS COMPLIANT, HALF BRICK PACKAGE-
BCP-350-12GN PHOENIX

获取价格

Barrier Strip Terminal Block,
BCP-350-16 PHOENIX

获取价格

Barrier Strip Terminal Block, 8A, 1.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
BCP-350-3 PHOENIX

获取价格

Barrier Strip Terminal Block, 8A, 1.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
BCP-350-4 PHOENIX

获取价格

Barrier Strip Terminal Block, 8A, 1.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT