生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.57 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 125 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.65 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC859R-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC859S | DIOTEC |
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Surface Mount General Purpose Si-Epi-Planar Double-Transistors |
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BC859T | INFINEON |
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NPN Silicon AF Transistors |
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BC859-T | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC859T/R | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC859-TAPE-13 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC859-TAPE-7 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC859TR | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, |
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BC859TR13 | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, |
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BC859W | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors |
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