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BC859W

更新时间: 2024-10-01 12:53:47
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 122K
描述
Low current (max. 100 mA). Low voltage (max. 45 V). Collector-base voltage VCBO -30

BC859W 数据手册

 浏览型号BC859W的Datasheet PDF文件第2页 
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BC859W,BC860W  
Features  
Low current (max. 100 mA).  
Low voltage (max. 45 V).  
1 Emitter  
2 Base  
3 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
BC859W BC860W  
Unit  
V
-30  
-30  
-50  
-45  
Collector-emitter voltage  
Emitter-base voltage  
V
-5  
V
-100  
-200  
-200  
200  
150  
Collector current  
mA  
mA  
mA  
mW  
Peak collector current  
ICM  
Peak base current  
IBM  
Total power dissipation  
Junction temperature  
Ptot  
Tj  
-65 to +150  
-65 to +150  
625  
Storage temperature  
Tstg  
Operating ambient temperature  
Thermal resistance from junction to ambient  
Ramb  
Rth j-a  
K/W  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  

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