BC859S

更新时间： 2024-02-16 01:44:04

品牌	Logo	应用领域
德欧泰克 - DIOTEC		晶体晶体管
页数	文件大小	规格书
2页	109K
描述
Surface Mount General Purpose Si-Epi-Planar Double-Transistors

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BC859S 数据手册

BC856S ... BC859S

Surface Mount General Purpose Si-Epi-Planar Double-Transistors

Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage

PNP

Version 2006-08-01

Power dissipation

Verlustleistung

300 mW

SOT-363

0.01 g

2^±0.1

0.9^±0.1

2 x 0.65

Plastic case

Kunststoffgehäuse

Type

Code

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

2.4

Dimensions - Maße [mm]

6 = C1

1 = E1

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

5 = B2

2 = B1

4 = E2

3 = C2

Maximum ratings (T_A= 25°C)

per transistor – pro Transistor

Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open

Grenzwerte (T_A= 25°C)

BC858S

BC856S BC857S

BC859S

- V_CBO

- V_CEO

- V_EB0

P_tot

65 V

80 V

45 V

50 V

30 V

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

E open

C open

30 V

5 V

300 mW ¹)

100 mA

200 mA

Collector current – Kollektorstrom (dc)

- I_C

Peak Collector current – Kollektor-Spitzenstrom

Peak Base current – Basis-Spitzenstrom

Peak Emitter current – Emitter-Spitzenstrom

- I_CM

- I_BM

I_EM

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

-55...+150°C

-55…+150°C

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

per transistor – pro Transistor

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

- V_CE= 5 V, - I_C= 10 µA

- V_CE= 5 V, - I_C= 2 mA

h_FE

–

110

90 ... 270

–

800

h-Parameters at/bei - V_CE= 5 V, - I_C= 2 mA, f = 1 kHz

Small signal current gain – Kleinsignal-Stromverstärkung

Input impedance – Eingangs-Impedanz

h_fe

h_ie

h_oe

h_re

–

220 ... 600

–

1.6 kΩ

18 µS

–

15 kΩ

110 µS

–

Output admittance – Ausgangs-Leitwert

–

Reverser voltage transfer ratio – Spannungsrückwirkung

1.5 ... 3*10^-4

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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