Datasheet > BC859CW/T1

BC859CW/T1

更新时间： 2024-01-23 05:43:56

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	54K
描述
TRANSISTOR SOT-323

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数据手册

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BC859CW/T1 数据手册

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BC859; BC860

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

note 1

VALUE

500

UNIT

R_{th j-a}

thermal resistance from junction to ambient

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

I_CBO

PARAMETER

CONDITIONS

I_E= 0; V_CB= −30 V

MIN. TYP. MAX. UNIT

collector cut-off current

−

−1

−

−15

−4

I_E= 0; V_CB= −30 V; T_j= 150 °C

I_C= 0; V_EB= −5 V

µA

I_EBO

h_FE

emitter cut-off current

DC current gain

−

−100 nA

I_C= −2 mA; V_CE= −5 V;

see Figs 2 and 3

BC859B; BC860B

BC859C; BC860C

220

420

−

475

−

800

V_CEsat

V_BEsat

V_BE

collector-emitter saturation

voltage

I_C= −10 mA; I_B= −0.5 mA

−75

−300 mV

I_C= −100 mA; I_B= −5 mA

−

−250 −650 mV

base-emitter saturation voltage

I_C= −10 mA; I_B= −0.5 mA; note 1

I_C= −100 mA; I_B= −5 mA; note 1

I_C= −2 mA; V_CE= −5 V; note 2

I_C= −10 mA; V_CE= −5 V; note 2

I_E= i_e= 0; V_CB= −10 V; f = 1 MHz

I_C= i_c= 0; V_EB= −500 mV; f = 1 MHz

−

−700

−850

−

base-emitter voltage

−600 −650 −750 mV

−

−820 mV

C_c

C_e

f_T

collector capacitance

emitter capacitance

transition frequency

noise ﬁgure

4.5

−

I_C= −10 mA; V_CE= −5 V; f = 100 MHz 100

I_C= −200 µA; V_CE= −5 V; R_S= 2 kΩ;

MHz

f = 30 Hz to 15 kHz

BC859B; BC860B;

BC859C; BC860C

−

noise ﬁgure

I_C= −200 µA; V_CE= −5 V; R_S= 2 kΩ;

f = 1 kHz; B = 200 Hz

BC859B; BC860B;

BC859C; BC860C

−

Notes

1. V_BEsatdecreases by about −1.7 mV/K with increasing temperature.

2. V_BEdecreases by about −2 mV/K with increasing temperature.

1999 May 28

1 234 5 6 7 8

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