生命周期: | Active | 零件包装代码: | TO-236 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 0.81 |
Samacsys Confidence: | 2 | Samacsys Status: | Released |
Samacsys PartID: | 720397 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Transistor BJT PNP | Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | SOT23-ren3 | Samacsys Released Date: | 2017-04-27 19:04:24 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 420 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC859C,235 | NXP |
获取价格 |
BC859; BC860 - PNP general purpose transistors TO-236 3-Pin |
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BC859C/E8 | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23 |
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BC859C/E9 | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23 |
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BC859C/T1 | ETC |
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TRANSISTOR |
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BC859C/T3 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI |
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BC859C-AU | PANJIT |
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SOT-23 |
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BC859CBK | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, |
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BC859CBKLEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, |
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BC859CD87Z | TI |
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PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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BC859CE6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
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