Datasheet > BC859C/E9

BC859C/E9

更新时间： 2024-01-23 17:35:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	218K
描述
TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 100MA I(C) \| SOT-23

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BC859C/E9 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.82	最大集电极电流 (IC)：	0.1 A
配置：	Single	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.31 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC859C/E9 数据手册

BC856 thru BC859

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (PNP)

Mounting Pad Layout

0.031 (0.8)

TO-236AB (SOT-23)

0.035 (0.9)

.122 (3.1)

.110 (2.8)

0.079 (2.0)

.016 (0.4)

Top View

Pin Configuration

0.037 (0.95)

1 = Base, 2 = Emitter,

3 = Collector

0.037 (0.95)

Type

Marking

Type

Marking

BC856A

BC858A

Dimensions in inches

and (millimeters)

.037(0.95)

BC857A

BC859A

Features

• PNP Silicon Epitaxial Planar Transistors for switching

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

and AF amplifier applications.

• Especially suited for automatic insertion in thick and

thin-film circuits.

Mechanical Data

• These transistors are subdivided into three groups

(A, B, and C) according to their current gain. The type

BC856 is available in groups A and B, however, the types

BC857, BC558 and BC859 can be supplied in all three

groups. The BC849 is a low noise type.

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

• As complementary types, the NPN transistors

BC846...BC849 are recomended.

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

BC856

BC857

BC858, BC859

Collector-Base Voltage

–V

CBO

CES

BC856

BC857

BC858, BC859

Collector-Emitter Voltage (Base shorted)

Collector-Emitter Voltage (Base open)

–V

BC856

BC857

BC858, BC859

–V

CEO

Emitter-Base Voltage

Collector Current

100

°C/W

°C

EBO

–I

Peak Collector Current

Peak Base Current

Peak Emitter Current

–I

200

Power Dissipation at T = 50°C

310⁽¹⁾

450⁽¹⁾

320⁽¹⁾

150

tot

Thermal Resistance Junction to Ambient Air

θJA

Thermal Resistance Junction to Substrate Backside

Junction Temperature

θSB

Storage Temperature Range

–65 to +150

°C

Note: (1) Device on fiberglass substrate, see layout on third page.

Document Number 88169

09-May-02

www.vishay.com

12 3 4 5

中文翻译

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与BC859C/E9相关器件

型号	品牌	获取价格	描述	数据表
BC859C/T1	ETC	获取价格	TRANSISTOR
BC859C/T3	NXP	获取价格	TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI
BC859C-AU	PANJIT	获取价格	SOT-23
BC859CBK	CENTRAL	获取价格	Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon,
BC859CBKLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon,
BC859CD87Z	TI	获取价格	PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BC859CE6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
BC859CE6327HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
BC859CE6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
BC859CL	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 100MA I(C) \| SOT-23

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