Datasheet > BC857CWQ62702C2295

BC857CWQ62702C2295

更新时间： 2024-01-14 11:44:50

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	124K
描述
TRANSISTOR SOT323

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BC857CWQ62702C2295 数据手册

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BC856AWT1 Series,

BC857BWT1 Series,

BC858AWT1 Series

Preferred Devices

General Purpose

Transistors

http://onsemi.com

PNP Silicon

COLLECTOR

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 which is

designed for low power surface mount applications.

BASE

• Device Marking:

BC856AWT1 = 3A

BC856BWT1 = 3B

BC857BWT1 = 3F

BC857CWT1 = 3G

BC858AWT1 = 3J

BC858BWT1 = 3K

EMITTER

MAXIMUM RATINGS

SOT–323/SC–70

CASE 419

Rating

Symbol BC856 BC857 BC858 Unit

STYLE 3

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

–65

–80

–45

–50

–30

CEO

CBO

EBO

DEVICE MARKING

–5.0

–100

–5.0

–100

–5.0

–100

Collector Current –

Continuous

mAdc

See Device

Marking Listing

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

150

(1)

FR–5 Board

= 25°C

ORDERING INFORMATION

Thermal Resistance,

Junction to Ambient

833

°C/W

°C

qJA

Device

Package

SOT–323

Shipping

Junction and Storage

Temperature Range

T , T

J stg

–55 to +150

BC856AWT1

BC856BWT1

BC857BWT1

BC857CWT1

BC858AWT1

BC858BWT1

3000 Units/Reel

1. FR–5 = 1.0 x 0.75 x 0.062 in

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

October, 2001 – Rev. 2

BC856AWT1/D

12 3 4 5 6 7 8

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