Datasheet > BC857E

BC857E

更新时间： 2023-12-06 20:02:52

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	233K
描述
小信号晶体管

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数据手册

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BC857E 数据手册

BC856E…BC860E

PNP Silicon Epitaxial Planar Transistor

Features

• For switching and amplifier applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

Value

Unit

Collector Base Voltage

BC856E

BC857E, BC860E

BC858E, BC859E

BC856E

BC857E, BC860E

BC858E, BC859E

Collector Emitter Voltage

-V_CEO

Emitter Base Voltage

Collector Current

-V_EBO

-I_C

100

℃

Peak Collector Current

Power Dissipation

-I_CM

P_tot

T_j

200

150

Junction Temperature

Storage Temperature Range

150

T_stg

- 65 to + 150

℃

Thermal Characteristics

Parameter

Thermal Resistance from Junction to Ambient ¹⁾

Symbol

R_θJA

Max.

833

Unit

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 18/04/2022 Rev: 02

12 3 4 5

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与BC857E相关器件

型号	品牌	获取价格	描述	数据表
BC857F	NXP	获取价格	PNP general purpose transistors
BC857F	AUK	获取价格	PNP Silicon Transistor (General purpose application Switching application)
BC857F	KODENSHI	获取价格	General purpose application
BC857F_06	AUK	获取价格	PNP Silicon Transistor
BC857FA	KODENSHI	获取价格	TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),SOT-23VAR
BC857FB	KODENSHI	获取价格	Transistor,
BC857FC	KODENSHI	获取价格	TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),SOT-23VAR
BC857G	TI	获取价格	45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BC857G-A-AE3-R	UTC	获取价格	Small Signal Bipolar Transistor,
BC857G-A-AL3-R	UTC	获取价格	Small Signal Bipolar Transistor,