Datasheet > BC857D

BC857D

更新时间： 2023-12-06 20:03:05

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	1054K
描述
小信号晶体管

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数据手册

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BC857D 数据手册

BC856D…BC858D

Dual PNP Silicon Epitaxial Planar Transistors

For general purpose and switching applications

TR2

TR1

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-26 Plastic Package

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

-V_CBO

Value

Unit

Collector Base Voltage

BC856D

BC857D

BC858D

Collector Emitter Voltage

BC856D

BC857D

BC858D

-V_CEO

Emitter Base Voltage

Collector Current

-V_EBO

-I_C

100

Peak Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

-I_CM

P_tot

T_j

200

300

150

T_Stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

417

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1/ 5

Dated: 10/01/2022 Rev: 02

12 3 4 5

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与BC857D相关器件

型号	品牌	获取价格	描述	数据表
BC857DE	SWST	获取价格	小信号晶体管
BC857E	SWST	获取价格	小信号晶体管
BC857F	NXP	获取价格	PNP general purpose transistors
BC857F	AUK	获取价格	PNP Silicon Transistor (General purpose application Switching application)
BC857F	KODENSHI	获取价格	General purpose application
BC857F_06	AUK	获取价格	PNP Silicon Transistor
BC857FA	KODENSHI	获取价格	TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),SOT-23VAR
BC857FB	KODENSHI	获取价格	Transistor,
BC857FC	KODENSHI	获取价格	TRANSISTOR,BJT,PNP,45V V(BR)CEO,100MA I(C),SOT-23VAR
BC857G	TI	获取价格	45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB