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BC857CWR PDF预览

BC857CWR

更新时间: 2023-11-02 19:29:00
品牌 Logo 应用领域
CENTRAL 小信号双极晶体管
页数 文件大小 规格书
2页 402K
描述
45V,100mA,275mW Surface mount Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

BC857CWR 数据手册

 浏览型号BC857CWR的Datasheet PDF文件第2页 
BC856W SERIES  
BC857W SERIES  
www.centralsemi.com  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BC856W and  
BC857W Series types are PNP Silicon Transistors  
manufactured by the epitaxial planar process, epoxy  
TM  
molded in a SUPERmini surface mount package,  
designed for general purpose switching and amplifier  
applications.  
MARKING CODE: SEE MARKING CODE TABLE  
ON FOLLOWING PAGE  
Note: Reverse Lead Codes Available, Add “R” to  
the end of the Part # and Marking Code.  
SOT-323 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
BC857W  
BC856W  
UNITS  
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
50  
45  
80  
65  
CBO  
CEO  
EBO  
C
CM  
5.0  
100  
200  
200  
275  
V
I
mA  
mA  
mA  
mW  
°C  
I
I
BM  
P
D
T , T  
-65 to +150  
455  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
15  
4.0  
UNITS  
nA  
μA  
nA  
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
=30V  
=30V, T =150°C  
=5.0V  
CBO  
CBO  
EBO  
CBO  
CBO  
CEO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
BE(ON)  
ib  
ob  
T
CB  
CB  
EB  
A
100  
BV  
BV  
BV  
BV  
BV  
V
V
V
V
V
I =10μA (BC857W)  
50  
80  
45  
65  
5.0  
C
I =10μA (BC856W)  
C
I =10mA (BC857W)  
C
I =10mA (BC856W)  
C
I =10μA  
E
I =10mA, I =0.5mA  
0.30  
0.65  
0.95  
0.75  
0.82  
12  
C
B
B
B
CE  
I =100mA, I =5.0mA  
C
I =100mA, I =5mA  
C
I =2.0mA, V =5.0V  
0.60  
100  
C
I =10mA, V =5.0V  
CE  
V
C
C
C
f
V
=0.5V, I =0, f=1.0MHz  
=10V, I =0, f=1.0MHz  
pF  
pF  
MHz  
EB  
CB  
CE  
CE  
C
E
V
V
V
5.0  
=5.0V, I =10mA, f=100MHz  
C
NF  
=5.0V, I =200μA,  
C
R =2.0KΩ, f=1.0KHz, BW=200Hz  
10  
dB  
S
BC856AW  
BC857AW  
MIN  
125  
MAX  
250  
h
V
=5.0V, I =2.0mA  
CE C  
FE  
R1 (20-November 2009)  

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