Datasheet > BC856A

BC856A

更新时间： 2024-11-30 08:49:55

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
5页	1312K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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BC856A 数据手册

BC856A,B

BC857A, B,C

BC858A, B,C

TRANSISTOR (PNP)

FEATURES

Ideally suited for automatic insertion

For Switching and AF Amplifier Applications

SOT-23

1. BASE

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

2. EMITTER

3. COLLECTOR

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

-80

-50

-30

BC856

BC857

BC858

V_CEO

Collector-Emitter Voltage

-65

-45

BC856

BC857

BC858

-30

V_EBO

I_C

Emitter-Base Voltage

-5

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-0.1

200

P_C

T_J

150

℃

T_stg

Storage Temperature

-65-150

℃

DEVICE MARKING

BC856A=3A; BC856B=3B;

BC857A=3E;BC857B=3F;BC857C=3G;

BC858A=3J; BC858B=3K; BC858C=3L

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3 4 5

中文翻译

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