5秒后页面跳转
BC850A-AQ PDF预览

BC850A-AQ

更新时间: 2024-01-14 19:11:29
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管
页数 文件大小 规格书
2页 102K
描述
暂无描述

BC850A-AQ 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BC850A-AQ 数据手册

 浏览型号BC850A-AQ的Datasheet PDF文件第2页 
BC846 ... BC850  
BC846 ... BC850  
Surface Mount General Purpose Si-Epi-Planar Transistors  
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage  
NPN  
NPN  
Version 2006-06-02  
Power dissipation – Verlustleistung  
250 mW  
2.9±0.1  
1.1  
Plastic case  
Kunststoffgehäuse  
SOT-23  
(TO-236)  
0.4  
3
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.9  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BC847  
BC850  
BC848  
BC849  
BC846  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
VCEO  
VCBO  
VEB0  
Ptot  
IC  
65 V  
80 V  
45 V  
50 V  
30 V  
30 V  
5 V  
6 V  
250 mW 1)  
Collector current – Kollektorstrom (dc)  
100 mA  
Peak Collector current – Kollektor-Spitzenstrom  
ICM  
200 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
VCE = 5 V, IC = 10 µA  
Group A  
Group B  
Group C  
hFE  
hFE  
hFE  
90  
150  
270  
VCE = 5 V, IC = 2 mA  
Group A  
Group B  
Group C  
hFE  
hFE  
hFE  
110  
200  
420  
180  
290  
520  
220  
450  
800  
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)  
IC = 10 mA, IB = 0.5 mA  
IC = 100 mA, IB = 5 mA  
VCEsat  
VCEsat  
90 mV  
200 mV  
250 mV  
600 mV  
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)  
IC = 10 mA, IB = 0.5 mA  
IC = 100 mA, IB = 5 mA  
VBEsat  
VBEsat  
700 mV  
900 mV  
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

与BC850A-AQ相关器件

型号 品牌 获取价格 描述 数据表
BC850AD87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC850-AH SWST

获取价格

小信号晶体管
BC850AL99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC850ALT1 MOTOROLA

获取价格

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
BC850ALT3 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
BC850AMTF UTC

获取价格

NPN Epitaxial Silicon Transistor
BC850AMTF ONSEMI

获取价格

NPN Epitaxial Silicon Transistor
BC850AMTF_11 FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
BC850AS62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC850AW TSC

获取价格

NPN Transistor