Datasheet > BC847W-TP

BC847W-TP

更新时间： 2024-02-29 17:58:52

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	424K
描述
Transistor,

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技术参数
数据手册

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BC847W-TP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC847W-TP 数据手册

M C C

BC846W

BC847W

BC848W

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN

General Purpose

Transistors

•

Low current (max. 100mA)

Low voltage (max. 65V)

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Maximum Ratings

•

Operating temperature : -65℃ to +150℃

Storage temperature : -65℃ to +150℃

Thermal resistance from junction to ambient*: 625K/W

SOT-323

Electrical Characteristics @ 25℃ Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage

(I_C=-10mAdc, I_B=0)

BC846W

Vdc

---

BC847W

BC848W

Collector-Base Breakdown Voltage

(I_C=-100µAdc, I_E=0)

BC846W

Vdc

---

BC847W

BC848W

DIMENSIONS

INCHES

Collector-Emitter Breakdown Voltage

(I_E=-10µAdc, I_C=0)

BC846W, BC847W

BC848W

Collector Current (DC)

Peak Collector Current

Peak Base Current

---

100

200

DIM

MIN

.071

.045

.079

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

I_C

I_CM

I_BM

mAdc

µAdc

.026 Nominal

0.65Nominal

1.20

.047

.055

.016

.004

.039

.010

.016

1.40

.40

.012

.000

.035

.004

.012

.30

.000

.90

.100

.30

* Transistor mounted on an FR4 printed-circuit board

.100

1.00

.250

.40

Suggested Solder

Pad Layout

0.70

0.90

1.90

0.65

www.mccsemi.com

Revision: 2

2006/05/26

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