BC846 THRU BC849
Small Signal Transistors (NPN)
FEATURES
NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
SOT-23
.122 (3.1)
.118 (3.0)
♦
♦
♦
.016 (0.4)
Top View
3
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three
1
2
groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors
BC856...BC859 are recommended.
.037(0.95) .037(0.95)
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
Type
Marking
Type
Marking
BC846A
B
1A
1B
BC848A
1J
1K
1L
B
C
BC847A
1E
1F
1G
B
C
BC849B
C
2B
2C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC846
BC847
V
80
50
30
V
V
V
CBO
V
CBO
CBO
BC848, BC849
V
BC846
BC847
BC848, BC849
V
80
50
30
V
V
V
CES
V
CES
V
CES
BC846
BC847
BC848, BC849
V
65
45
30
V
V
V
CEO
V
CEO
V
CEO
BC846, BC847
BC848, BC849
V
EBO
6
5
V
V
EBO
V
Collector Current
I
I
100
mA
mA
mA
mA
mW
°C
C
Peak Collector Current
Peak Base Current
Peak Emitter Current
200
CM
I
200
BM
–I
P
200
EM
Power Dissipation at T = 50 °C
3101)
150
SB
tot
Junction Temperature
T
j
Storage Temperature Range
T
S
–65 to +150
°C
1) Device on fiberglass substrate, see layout
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