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BC848A

更新时间: 2024-11-16 08:49:51
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
4页 1930K
描述
TRANSISTOR (NPN)

BC848A 数据手册

 浏览型号BC848A的Datasheet PDF文件第2页浏览型号BC848A的Datasheet PDF文件第3页浏览型号BC848A的Datasheet PDF文件第4页 
BC846A,B /BC847A, B, C /BC848A, B, C  
TRANSISTOR (NPN)  
SOT-23  
FEATURES  
z
Ideally suited for automatic insertion  
z
For Switching and AF Amplifier Applications  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
80  
50  
30  
BC846  
BC847  
BC848  
VCEO  
Collector-Emitter Voltage  
V
65  
45  
BC846  
BC847  
BC848  
30  
VEBO  
IC  
Emitter-Base Voltage  
6
V
A
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
0.1  
PC*  
TJ  
200  
150  
-65-150  
mW  
Tstg  
Storage Temperature  
DEVICE MARKING  
BC846A=1A; BC846B=1B;  
BC847A=1E; BC847B=1F; BC847C=1G;  
BC848A=1J; BC848B=1K: BC848C=1L  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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