BC846A
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.225
W (Tamb=25OC) Note1
Collector current
ICM :
Collector-base voltage
*
*
*
0.1
80
A
V
:
V
CBO
SOT-23
Operating and storage junction temperature range
T ,Tstg: -55OC to +150OC
J
COLLECTOR
3
0.055(1.40)
0.047(1.20)
BASE
MECHANICAL DATA
* Case: Molded plastic
1
2
EMITTER
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
* Weight: 0.008 gram
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
3
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
MIN
MAX
UNITS
Collector-base breakdown voltage (I = 10µA, I =0)
V
80
65
6
-
-
-
V
V
V
C
E
CBO
Collector-emitter breakdown voltage (I = 10mA, I =0)
V
CEO
C
B
Emitter-base breakdown voltage (I = 10µA, I =0)
V
E
C
EBO
Collector cut-off current (V = 70V, I =0)
I
-
0.1
µA
µA
µA
-
CB
E
CBO
Collector cut-off current (V = 60V, I =0)
I
-
-
0.1
0.1
CE
B
CEO
Emitter cut-off current (V = 5V, I =0)
I
EB
C
EBO
DC current gain (V = 5V, I = 2mA)
h
110
220
CE
C
FE(1)
Collector-emitter saturation voltage (I = 100mA, I = 5mA)
V
-
-
0.5
1.1
V
V
C
B
CE(sat)
Base-emitter saturation voltage (I = 100mA, I = 5mA)
V
C
B
BE(sat)
Transition frequency (V = 5V, I = 10mA, f= 100MHZ)
100
-
MHZ
f
T
CE
C
DEVICE MARKING
BC846A
1A
Notes : 1. Transistor mounted on an FR4 Printed-circuit board.
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
2007-3